Tranzisztor IGBT N-gyors 650V 50A/100°C 350W TO-247-3
1 db-tól 795,01 Ft
2 db-tól 711,11 Ft
10 db-tól 635,21 Ft
30 db-tól 591,26 Ft
240 db-tól 527,34 Ft
An insulated gate bipolar transistor (IGBT) is a power semiconductor device that combines a MOSFET and an output bipolar transistor on a single chip. Diotec currently offers IGBTs in the popular TO-247-3 and TO-247-4 packages, supporting up to 75 A at 650 V and 40 A at 1350 V at 100 °C chip temperature. Higher-power models (115 A/650 V and 100 A/1200 V) are planned for 2025.
Features:
- Trench gate field-stop structure with an antiparallel diode
- Available in three speed categories, (S, M, F) based on switching frequency
- S – up to 20 kHz (reSonant switching)
- M – up to 50 kHz (Medium-speed switching)
- F – up to 100 kHz (Fast switching)
Applications:
- Induction heating – cooktops and industrial applications (S)
- Motor drive inverters – EVs, appliances (F)
- Solar power inverters (M)
- Uninterruptible power supplies (UPS) (M)
- Positive temperature coefficient (PTC) heating elements (M)
- Power factor correction (PFC) (F)
- Welding machines (F, M)
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Note: Samples are provided for development projects only, not for individual personal use.
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