The picture is only for illustration, please see the technical specification in product details.

DIW120SIC023-AQ | DIOTEC

Transistor SiC MOSFET N-Ch, 130A 1200V 600W 23mOhm TO2473L, AEC-Q101

Ord.number:	364332
In stock	0 pcs

MOQ:	720 pcs
Allowed ordering quantities:	30 pcs (720, 750, 780 ... pcs)
Packing unit:	30 pcs (in tube)
Category:	FETs, MOSFETs
Product info:	On request
Manufacturer (Brand):	DIOTEC

Price excl.VAT

720 pcs+

56,40 €
Bulk discounts

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Need better prices?

As a registered customer you will get up to 20% discount for most of in-stock items.

The prices are exl. VAT. Prices for items, which are not held in our stock can be different from indicated ones. We guarantee prices only for in-stock quantity.

DIW120SIC023-AQ

Transistor SiC MOSFET N-Ch, 130A 1200V 600W 23mOhm TO2473L, AEC-Q101

The picture is only for illustration, please see the technical specification in product details.

Ord.number:	364332
In stock	0 pcs

MOQ:	720 pcs
Allowed ordering quantities:	30 pcs (720, 750, 780 ... pcs)
Packing unit:	30 pcs (in tube)
Category:	FETs, MOSFETs
Product info:	On request
Manufacturer (Brand):	DIOTEC

Price excl.VAT

720 pcs+

56,40 €
Bulk discounts

Get Quote
Manufacturers Standard Package
Show shipping charges

Need better prices?

As a registered customer you will get up to 20% discount for most of in-stock items.

The prices are exl. VAT. Prices for items, which are not held in our stock can be different from indicated ones. We guarantee prices only for in-stock quantity.

Manufacturer (Brand)	DIOTEC
Series	-
Polarity	SiCFET N
Vdss (Drain to Source Voltage)	1200 V
Id @ Tc=25°C (Continuous Drain Current)	125A
Drive Voltage	18V
Rds On (Max) @ Id, Vgs	23mOhm @ 75A , 18V
Vgs(th) (Max) @ Id	2,9V @ 250µA
Qg (Total Gate Charge, Max @ Vgs)	45nC @ 10V
Vgs (Max)	55555 V
Pd (Power Dissipation, Max)	600 W
Operating Temperature	-55°C...175°C
Case	TO247-3
Mounting Type	Through Hole
Features	-
Note	-
MSL	-
RoHS	Yes

Datasheet:

diw120sic023.pdf [863,1 kB]

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